ZXTC6720MC document number: ds31929 rev. 3 - 2 1 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC dual 80v npn & 70v pnp low saturation transistor combination features and benefits npn transistor ? bv ceo > 80v ? i c = 3.5a continuous collector current ? low saturation voltage (185mv max @ 1a) ? r sat = 68m? for a low equivalent on-resistance pnp transistor ? bv ceo > -70v ? i c = -2.5a continuous collector current ? low saturation voltage (-220mv max @ -1a) ? r sat = 117m? for a low equivalent on-resistance ? h fe characterized up to -5a for high current gain hold up ? low profile 0.8mm high package for thin applications ? r ja efficient, 40% lower than sot26 ? 6mm 2 footprint, 50% smaller than tsop6 and sot26 ? lead-free, rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: dfn3020b-8 ? case material: molded plasti c. ?green? molding compound. ? terminals: pre-plated nipdau leadframe. ? nominal package height: 0.8mm ? ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? weight: 0.013 grams (approximate) applications ? dc ? dc converters ? charging circuits ? power switches ? motor control ? portable applications ordering information (note 3) product marking reel size (inches) tape width (mm) quantity per reel ZXTC6720MCta de4 7 8 3,000 notes: 1. no purposefully added lead. 2. diodes inc?s ?green? policy can be found on our website at http://www.diodes.com 3. for packaging details, go to our website at http://www.diodes.com. marking information equivalent circuit top view bottom view dfn3020b-8 npn transistor pnp transistor de4 = product type marking code top view, dot denotes pin 1 c2 e 2 b2 c 1 e 1 b1 c2 c2 c1 c1 e2 b2 e1 b1 c1 c2 pin 1 bottom view pin out de4
ZXTC6720MC document number: ds31929 rev. 3 - 2 2 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC maximum ratings @ t a = 25c unless otherwise specified parameter symbol npn pnp unit collector-base voltage v cbo 100 -70 v collector-emitter voltage v ceo 80 -70 emitter-base voltage v ebo 7 -7 peak pulse current i cm 5 -3 a continuous collector current (notes 4 & 7) i c 3.5 -2.5 (notes 5 & 7) 4 -3 base current i b 1 thermal characteristics @ t a = 25c unless otherwise specified characteristic symbol npn pnp unit power dissipation linear derating factor (notes 4 & 7) p d 1.5 12 w mw/ c (notes 5 & 7) 2.45 19.6 (notes 6 & 7) 1.13 8 (notes 6 & 8) 1.7 13.6 thermal resistance, junction to ambient (notes 4 & 7) r ja 83.3 c/w (notes 5 & 7) 51.0 (notes 6 & 7) 111 (notes 6 & 8) 73.5 thermal resistance, junction to lead (notes 7 & 9) r jl 17.1 operating and storage temperature range t j , t stg -55 to +150 c notes: 4. for a dual device surface mounted on 28mm x 28mm (8cm 2 ) fr4 pcb with high coverage of single sided 2 oz copper, in still air conditions; the device is measured when operating in a steady-state condition. t he heatsink is split in half with the exposed collector pads connected to each half. 5. same as note (4), except the device is measured at t <5 sec. 6. same as note (4), except the devic e is surface mounted on 31mm x 31mm (10cm 2 ) fr4 pcb with high coverage of single sided 1oz copper. 7. for a dual device with one active die. 8. for dual device with 2 active die running at equal power. 9. thermal resistance from junction to solder-point (at the end of the collector lead).
ZXTC6720MC document number: ds31929 rev. 3 - 2 3 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC thermal characteristics 0.1 1 10 100 0.01 0.1 1 10 0 25 50 75 100 125 150 0.0 0.5 1.0 1.5 2.0 100 1m 10m 100m 1 10 100 1k 0 20 40 60 80 0.1 1 10 100 0 25 50 75 100 125 150 175 200 225 100m 1 10 100 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 0.1 1 10 100 0.01 0.1 1 8sqcm 2oz cu one active die 100us 100ms 1s v ce(sat) limited 1ms npn safe operating area single pulse, t amb =25c dc 10ms i c collector current (a) v ce collector-emitter voltage (v) 10sqcm 1oz cu one active die 10sqcm 1oz cu two active die 8sqcm 2oz cu one active die derating curve max power dissipation (w) temperature (c) 8sqcm 2oz cu one active die d=0.2 d=0.5 d=0.1 transient thermal impedance single pulse d=0.05 thermal resistance (c/w) pulse width (s) 1oz cu two active die 1oz cu one active die 2oz cu once active die 2oz cu two active die thermal resistance v board area thermal resistance (c/w) board cu area (sqcm) 1oz cu one active die 1oz cu two active die 2oz cu one active die 2oz cu two active die t amb =25c t j max =150c continuous power dissipation v board area p d dissipation (w) board cu area (sqcm) 8sqcm 2oz cu one active die 100us 1ms 10ms 100ms 1s dc single pulse, t amb =25c v ce(sat) limited pnp safe operating area -i c collector current (a) -v ce collector-emitter voltage (v)
ZXTC6720MC document number: ds31929 rev. 3 - 2 4 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC electrical characteris tics, npn transistor (at t a = 25c unless otherwise specified) characteristic symbol min typ max unit test condition collector-base breakdown voltage bv cbo 100 180 - v i c = 100a collector-emitter breakdown voltage (note 10) bv ceo 80 110 - v i c = 10ma emitter-base breakdown voltage bv ebo 7 8.2 - v i e = 100a collector cutoff current i cbo - - 100 na v cb = 80v emitter cutoff current i ebo - - 100 ?na v eb = 6v collector emitter cutoff current i ces - - 100 na v ce = 65v static forward current transfer ratio (note 10) h fe 200 300 110 60 20 - 450 450 170 90 30 10 - 900 - - - - - i c = 10ma, v ce = 2v i c = 200ma, v ce = 2v i c = 1a, v ce = 2v i c = 1.5a, v ce = 2v i c = 3a, v ce = 2v i c = 5a, v ce = 2v collector-emitter saturation voltage (note 10) v ce(sat) - - - - - 15 45 145 160 240 20 60 185 200 340 mv i c = 0.1a, i b = 10ma i c = 0.5a, i b = 50ma i c = 1a, i b = 20ma i c = 1.5a, i b = 50ma i c = 3.5a, i b = 300ma base-emitter turn-on voltage (note 10) v be ( on ) - 0.96 1.05 v i c = 3.5a, v ce = 2v base-emitter saturation voltage (note 10) v be ( sat ) - 1.09 1.175 v i c = 3.5a, i b = 300ma output capacitance c obo - 11.5 18 pf v cb = 10v. f = 1mhz transition frequency f t 100 160 - mhz v ce = 10v, i c = 50ma, f = 100mhz turn-on time t on - 86 - ns v cc = 10v, i c = 1a i b1 = i b2 = 25ma turn-off time t off - 1128 - ns notes: 10. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC6720MC document number: ds31929 rev. 3 - 2 5 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC npn - typical electrical characteristics 1m 10m 100m 1 10 1m 10m 100m 1m 10m 100m 1 0.00 0.05 0.10 0.15 0.20 0.25 1m 10m 100m 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1m 10m 100m 1 0.4 0.6 0.8 1.0 1m 10m 100m 1 10 0.2 0.4 0.6 0.8 1.0 0 90 180 270 360 450 540 630 i c /i b =20 v ce(sat) v i c tamb=25c i c /i b =100 i c /i b =50 i c /i b =10 v ce(sat) (v) i c collector current (a) v be(sat) v i c i c /i b =50 100c 25c -55c v ce(sat) (v) i c collector current (a) h fe v i c v ce =2v -55c 25c 100c normalised gain i c collector current (a) 25c v ce(sat) v i c i c /i b =50 100c -55c v be(sat) (v) i c collector current (a) v be(on) v i c v ce =2v 100c 25c -55c v be(on) (v) i c collector current (a) typical gain (h fe )
ZXTC6720MC document number: ds31929 rev. 3 - 2 6 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC pnp - electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition collector-base breakdown voltage v ( br ) cbo -70 -150 - v i c = -100a collector-emitter breakdown voltage (note 11) v ( br ) ceo -70 -125 - v i c = -10ma emitter-base breakdown voltage v ( br ) ebo -7 -8.5 - v i e = -100a collector cutoff current i cbo - - -100 na v cb = -55v emitter cutoff current i ebo - - -100 ?na v eb = -6v collector emitter cutoff current i ces - - -100 na v ce = -55v static forward current transfer ratio (note 11) h fe 200 300 175 40 - 470 450 275 60 10 - - - - - - i c = -10ma, v ce = -5v i c = -100ma, v ce = -5v i c = -1a, v ce = -5v i c = -1.5a, v ce = -5v i c = -3a, v ce = -5v collector-emitter saturation voltage (note 11) v ce(sat) - - - - -35 -135 -140 -175 -50 -200 -220 -270 mv i c = -0.1a, i b = -10ma i c = -0.5a, i b = -20ma i c = -1.0a, i b = -100ma i c = -1.5a, i b = -200ma base-emitter turn-on voltage (note 11) v be ( on ) - 0.78 1.00 v i c = -1.5a, v ce = -5v base-emitter saturation voltage (note 11) v be ( sat ) - 0.94 1.05 v i c = -1.5a, i b = -200ma output capacitance c obo - 14 20 pf v cb = -10v. f = 1mhz transition frequency f t 150 180 - mhz v ce = -10v, i c = -50ma, f = 100mhz turn-on time t on - 40 - ns v cc = -50v, i c = -1a i b1 = i b2 = -50ma turn-off time t off - 700 - ns notes: 11. measured under pulsed conditions. pulse width 300s. duty cycle 2%.
ZXTC6720MC document number: ds31929 rev. 3 - 2 7 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC pnp - typical electrical characteristics 1m 10m 100m 1 10 10m 100m 1 10m 100m 1 0.0 0.1 0.2 0.3 0.4 1m 10m 100m 1 0 100 200 300 400 500 600 700 800 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 1m 10m 100m 1 0.2 0.4 0.6 0.8 1.0 i c /i b =5 v ce(sat) v i c tamb=25c i c /i b =50 i c /i b =20 i c /i b =10 - v ce(sat) (v) - i c collector current (a) 100c v be(sat) v i c i c /i b =10 150c 25c -55c - v ce(sat) (v) - i c collector current (a) 150c h fe v i c v ce =5v -55c 25c 100c - i c collector current (a) 150c 25c v ce(sat) v i c i c /i b =10 100c -55c - v be(sat) (v) - i c collector current (a) 150c v be(on) v i c v ce =5v 100c 25c -55c - v be(on) (v) - i c collector current (a) typical gain (h fe )
ZXTC6720MC document number: ds31929 rev. 3 - 2 8 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC package outline dimensions suggested pad layout dfn3020b-8 dim min max typ a 0.77 0.83 0.80 a1 0 0.05 0.02 a3 - - 0.15 b 0.25 0.35 0.30 d 2.95 3.075 3.00 d2 0.82 1.02 0.92 d4 1.01 1.21 1.11 e - - 0.65 e 1.95 2.075 2.00 e2 0.43 0.63 0.53 l 0.25 0.35 0.30 z - - 0.375 all dimensions in mm dimensions value (in mm) c 0.650 g 0.285 g1 0.090 x 0.400 x1 1.120 y 0.730 y1 0.500 y2 0.365 b e e2 d2 l d e a z a1 a3 d4 d4 c x1 g1 x y1 y y2 g
ZXTC6720MC document number: ds31929 rev. 3 - 2 9 of 9 www.diodes.com january 2011 ? diodes incorporated a product line o f diodes incorporated ZXTC6720MC important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described he rein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com
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